CRad
Free On-line | Product Brochure | Video Demo
CRad is a tool to predict Single Event Effects (SEE) rate, Total Displacement Dose (TDD) and Total Ionizing Dose (TID) of semiconductor devices on orbits in space. It's the professional version of ForeCAST. Their differences are at the bottom of this page.
The workflow, and also the GUI of CRad:
Radiation Environment on Certain Orbits
Models for radiation environment:
- Orbit description
- Orbital elements (Keplerian elements)
- Geomagnetic model
- mimic ISO
- Radiation models
- Galaxy cosmic rays
- CREME86
- ISO15390
- Solar cosmic rays
- CREME86
- CREME96
- Anomalous cosmic rays
- CREME86
- CREME96
- Trapped radiation by geomagnetic field (Van Allen Belt)
- AP8/AE8 model
- Galaxy cosmic rays
- Shielding by geomagnetic field
The flux of particles:
The trapped radiation can also be shown on 2D-orbit:
SEE Rate Prediction
The methods of SEE rate prediction are explained here. What CRad do includes:
- Ground Test Based
- For heavy ions
- IRPP model
- For proton
- Bendel model with two parameters
- PROFIT model
- J.Barak2006 model
- For heavy ions
- Device Structure Based
- NRED
- NRED-MC
Shielding of the Space Craft
For SEE Rate
The shielding effect of a space craft can be simplified as a thickness distribution of equivalent aluminum layers. To calculate the thickness distribution of a certain space craft, SSAT (developed by ESA) is employed. Due to different physics and geometry requirements, SSAT is not a part of CRad, but implemented in VisualParticle.
For TDD and TID
When predicting TDD and TID of devices in space orbits, Shieldose2 code, developed by NASA, is used for simulating the shielding of space craft shell. Three kinds of geometry model are supported by Shieldose2, including infinite-thickness slab, finite-thickness slab, and finite sphere.
ForeCAST vs. CRad
ForeCAST is the on-line version of CRad.
| ForeCAST | CRad | |
|---|---|---|
| Running on | On-line | GNU Linux(R) or MS Windows(R) |
| Function Modules | Standard | Customizable |
| Spacecraft Shielding | 1-Dimension | 3-Dimension |
| SEE Prediction | Standard | Fancier Methods |
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WebTCAD
WebTCAD is the web version of Cogenda's VisualTCAD, a powerful tool of TCAD process and device simulation. It's mainly designed for teaching purpose, aimed at demonstrating/simulating industry-standard semiconductor fabricating and working process. The intuitive graphic UI, step-by-step workflow, and fully featured post process ability make it much easier for university teachers and students to use.
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What's New
- VisualTCAD 2024.10 released [2024-11-04]
- VisualTCAD 2024.06 released [2024-07-18]
- VisualTCAD 2024.03 released [2024-04-09]
- VisualTCAD 2024.02 released [2024-03-05]
- VisualTCAD 2023.12 released [2024-01-17]
- VisualTCAD 2023.11 released [2023-12-07]
- MozzTCAD 2023.10 released [2023-11-06]
- VisualTCAD 2.2 3D device simulator Genius support stress induced multi-valley mobility model for Si and SiGe material. [2022-11-01]
- VisualTCAD 2.1-p4 Simulation speed of 3D device simulator Genius increased by 10%~30%. [2022-08-24]
- VisualTCAD 2.1 3D device simulator Genius support nanometer device such as FDSOI and FinFET. [2022-05-15]
- VisualTCAD 2.0 First release of 2D process simulator Genes after years of development. [2021-10-17]
- Vspice 2.2 released [2019-4-15]
- Vspice 2.0 released [2018-10-20]
- VisualTCAD 1.9.2-3 Comes with revamped Total-Ionizing Dose effect simulation and supports SEE simulation in FDSOI circuits. [2017-10-15]
- Cogenda partners with POLYTEDA to distribute PowerDRC/LVS in Asia. [2017-9-15]
- Vspice 1.0 released [2017-4-15]
- CRad's FREE on-line version ForeCAST is open to you now! [2015-12-15]
- VisualTCAD 1.8.2-6 Comes with Total-Ionizing Dose effect simulation, among other improvements. [2015-7-10]
- Cogenda presented a quantitative analysis on the SEU rate of radiation-hardened SRAM cell due to elastic collisions at NSREC 2014. [2014-7-28]
- VisualTCAD 1.8.0-1 released with a new product for space radiation environment and effects analysis [2014-3-22]
- Cogenda presented a fully-physical simulation framework for single-event effects in semiconductor devices at RADECS 2012 [2012-9-28]
- Cogenda to present the super large TCAD device simulation at SISPAD 2012 [2012-6-18]
- Technical: Half-implicit solver for million-mesh-node TCAD device/circuit simulation [2012-6-18]
- VisualTCAD 1.7.4 released [2012-6-3]
- VisualTCAD 1.7.3 released [2012-1-1]
- VisualTCAD 1.7.2-5 released [2011-09-29]
- Cogenda to present MOSFET inverse-modeling technology at SISPAD 2011 and the companion workshop. [2011-07-17]
- Technical: Crossing the 10-transistor barrier of device simulation. [2011-07-12]
- New product: VisualParticle/GSeat for radiation effect analysis. [2011-07-01]
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CMOS Logic Gates
Want to simulate small logic circuit cells in 3D? Genius allows you to simulate a complete cell in a single TCAD model.
Or if you want to simulate it the traditional way, you can still perform a mixed-mode circuit and device simulation using SPICE.