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Cogenda TCAD Software
What's New | System Requirements
Installers (Standard Edition)
Editions
Several editions are available on each platform, as summarized in the table below:
| Features/Platform | WinXP/Vista/7 | RHEL7 | RHEL6 | RHEL5 | Ubuntu1204 | Ubuntu1404 | Ubuntu1604 |
|---|---|---|---|---|---|---|---|
| Standard, 32bit | 1.8.2 | - | - | - | - | - | - |
| Standard, 64bit | 1.8.0 | 2.0 | 1.9.2 | 1.9.2 | 1.9.2 | 1.9.2 | 1.9.2 |
| Full, 64bit | - | 2.0 | request | request | request | request | request |
| Full, Cluster 64bit | - | request | request | request | - | - | - |
- Full: VisualParticle and several other advanced tools are only available in the full package.
- Cluster: with Infiniband interconnect support, see supported hardware/software.
If you need to evaluate any of the "on-request" editions, Contact us for a download ticket.
User's Guides [v2.2]
Release Notes [v2.2]
Open Source
| Genius Device Simulator (GPL Source Code) | Source Repository at Github |
| PyEDA (device/circuit simulation for teaching) | Source Repository at Github |
| Suprem4 (binaries of the Stanford release) | Source Repository at Github |
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WebTCAD
WebTCAD is the web version of Cogenda's VisualTCAD, a powerful tool of TCAD process and device simulation. It's mainly designed for teaching purpose, aimed at demonstrating/simulating industry-standard semiconductor fabricating and working process. The intuitive graphic UI, step-by-step workflow, and fully featured post process ability make it much easier for university teachers and students to use.
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What's New
- VisualTCAD 2.2 3D device simulator Genius support stress induced multi-valley mobility model for Si and SiGe material. [2022-11-01]
- VisualTCAD 2.1-p4 Simulation speed of 3D device simulator Genius increased by 10%~30%. [2022-08-24]
- VisualTCAD 2.1 3D device simulator Genius support nanometer device such as FDSOI and FinFET. [2022-05-15]
- VisualTCAD 2.0 First release of 2D process simulator Genes after years of development. [2021-10-17]
- VisualTCAD 1.9.2-3 Comes with revamped Total-Ionizing Dose effect simulation and supports SEE simulation in FDSOI circuits. [2017-10-15]
- Cogenda partners with POLYTEDA to distribute PowerDRC/LVS in Asia. [2017-9-15]
- CRad's FREE on-line version ForeCAST is open to you now! [2015-12-15]
- VisualTCAD 1.8.2-6 Comes with Total-Ionizing Dose effect simulation, among other improvements. [2015-7-10]
- Cogenda presented a quantitative analysis on the SEU rate of radiation-hardened SRAM cell due to elastic collisions at NSREC 2014. [2014-7-28]
- VisualTCAD 1.8.0-1 released with a new product for space radiation environment and effects analysis [2014-3-22]
- Cogenda presented a fully-physical simulation framework for single-event effects in semiconductor devices at RADECS 2012 [2012-9-28]
- Cogenda to present the super large TCAD device simulation at SISPAD 2012 [2012-6-18]
- Technical: Half-implicit solver for million-mesh-node TCAD device/circuit simulation [2012-6-18]
- VisualTCAD 1.7.4 released [2012-6-3]
- VisualTCAD 1.7.3 released [2012-1-1]
- VisualTCAD 1.7.2-5 released [2011-09-29]
- Cogenda to present MOSFET inverse-modeling technology at SISPAD 2011 and the companion workshop. [2011-07-17]
- Technical: Crossing the 10-transistor barrier of device simulation. [2011-07-12]
- New product: VisualParticle/GSeat for radiation effect analysis. [2011-07-01]
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3D SRAM Simulation
A 3D SRAM model with 96,000 nodes.
Create the model directly from mask layout and you can simulate circuit cells at stunning speed.