信息更新

• VisualTCAD 1.9.2-3 Comes with revamped Total-Ionizing Dose effect simulation and supports SEE simulation in FDSOI circuits. [2017-10-15]
• Cogenda partners with POLYTEDA to distribute PowerDRC/LVS in Asia. [2017-9-15]
• CRad's FREE on-line version ForeCAST is open to you now! [2015-12-15]
• VisualTCAD 1.8.2-6 Comes with Total-Ionizing Dose effect simulation, among other improvements. [2015-7-10]
• Cogenda presented a quantitative analysis on the SEU rate of radiation-hardened SRAM cell due to elastic collisions at NSREC 2014. [2014-7-28]
• VisualTCAD 1.8.0-1 released with a new product for space radiation environment and effects analysis [2014-3-22]
• Cogenda presented a fully-physical simulation framework for single-event effects in semiconductor devices at RADECS 2012 [2012-9-28]
• Cogenda to present the super large TCAD device simulation at SISPAD 2012 [2012-6-18]
• Technical: Half-implicit solver for million-mesh-node TCAD device/circuit simulation [2012-6-18]
• VisualTCAD 1.7.4 released [2012-6-3]
• VisualTCAD 1.7.3 released [2012-1-1]
• VisualTCAD 1.7.2-5 released [2011-09-29]
• Cogenda to present MOSFET inverse-modeling technology at SISPAD 2011 and the companion workshop. [2011-07-17]
• Technical: Crossing the 10-transistor barrier of device simulation. [2011-07-12]
• New product: VisualParticle/GSeat for radiation effect analysis. [2011-07-01]

FinFET Transistor

FinFET devices are used in the latest 22nm generation CMOS processes. Construct your FinFET model with Gds2Mesh and simulate it with Genius, today.