Genes: 2D process simulator for Silicon/SiC devices
Genes is a smart 2D process simulator for Silicon/SiC devices. It simulates standard process simulation steps including etching, deposition, ion implantation, diffusion, oxidation, epi and silicidation.
Robust Geometry
- Efficient and Robust 2D geometry kernel
- use exact math to avoid any numerical rounding error
- Support point, line segment, polygon
- fast line intersection and polygon booling operation
Adaptive Mesh
High quality quadtree based mesh
quadtree as background mesh,with special process at boundary
advantage:
- efficient for adaptive refinement
- friendly for interpolation
Flexable PDE solver
- Suitable for diffusion PDE
- With parallel support
Etch
Support various etch model:
- isotropic
- anisotropic
- crysal orientated
- axis orientated
- trapezoidal
- Poly
- CMP
Deposit
Support various deposit model:
- isotropic
- anisotropic
- crysal orientated
- axis orientated
- Poly
- CMP
Implant
Analytic Ion implantation
- Dopant Profile as Ion energy, dose, tilt angle, rotation angle, as well as screen oxide
- Damage based on Hobler Model
- Implant table calibratedwith MC
- Support Parallel speedup
Diffusion
Sophisticated diffusion solver
- Flexible PDE framework
- Fermi, 3-stream and 5-stream model with cluaster support
- Support Calibration
- Support Parallel speedup
Oxidation
Advanced Oxidation Solver
- Various oxidation model
- Kinetic mesh motion support
- Support Calibration
- Support Parallel speedup
STI
STI bulider
- Create STI by parameters
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WebTCAD
WebTCAD is the web version of Cogenda's VisualTCAD, a powerful tool of TCAD process and device simulation. It's mainly designed for teaching purpose, aimed at demonstrating/simulating industry-standard semiconductor fabricating and working process. The intuitive graphic UI, step-by-step workflow, and fully featured post process ability make it much easier for university teachers and students to use.
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What's New
- VisualTCAD 2024.03 released [2024-04-09]
- VisualTCAD 2024.02 released [2024-03-05]
- VisualTCAD 2023.12 released [2024-01-17]
- VisualTCAD 2023.11 released [2023-12-07]
- MozzTCAD 2023.10 released [2023-11-06]
- VisualTCAD 2.2 3D device simulator Genius support stress induced multi-valley mobility model for Si and SiGe material. [2022-11-01]
- VisualTCAD 2.1-p4 Simulation speed of 3D device simulator Genius increased by 10%~30%. [2022-08-24]
- VisualTCAD 2.1 3D device simulator Genius support nanometer device such as FDSOI and FinFET. [2022-05-15]
- VisualTCAD 2.0 First release of 2D process simulator Genes after years of development. [2021-10-17]
- Vspice 2.2 released [2019-4-15]
- Vspice 2.0 released [2018-10-20]
- VisualTCAD 1.9.2-3 Comes with revamped Total-Ionizing Dose effect simulation and supports SEE simulation in FDSOI circuits. [2017-10-15]
- Cogenda partners with POLYTEDA to distribute PowerDRC/LVS in Asia. [2017-9-15]
- Vspice 1.0 released [2017-4-15]
- CRad's FREE on-line version ForeCAST is open to you now! [2015-12-15]
- VisualTCAD 1.8.2-6 Comes with Total-Ionizing Dose effect simulation, among other improvements. [2015-7-10]
- Cogenda presented a quantitative analysis on the SEU rate of radiation-hardened SRAM cell due to elastic collisions at NSREC 2014. [2014-7-28]
- VisualTCAD 1.8.0-1 released with a new product for space radiation environment and effects analysis [2014-3-22]
- Cogenda presented a fully-physical simulation framework for single-event effects in semiconductor devices at RADECS 2012 [2012-9-28]
- Cogenda to present the super large TCAD device simulation at SISPAD 2012 [2012-6-18]
- Technical: Half-implicit solver for million-mesh-node TCAD device/circuit simulation [2012-6-18]
- VisualTCAD 1.7.4 released [2012-6-3]
- VisualTCAD 1.7.3 released [2012-1-1]
- VisualTCAD 1.7.2-5 released [2011-09-29]
- Cogenda to present MOSFET inverse-modeling technology at SISPAD 2011 and the companion workshop. [2011-07-17]
- Technical: Crossing the 10-transistor barrier of device simulation. [2011-07-12]
- New product: VisualParticle/GSeat for radiation effect analysis. [2011-07-01]
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Solar Cell with Surface Texturing
A section (300x300 um) of a solar cell with inverted pyramid surface texturing, with over 600,000 mesh nodes.
Anti-reflection coating present at the front surface is taken into account in the simulation.