Video Tutorial on Simulation of Single-Event Upset in SRAM Cell
In the first tutorial, you will learn how to estimate the SEU rate of a memory chip in a satellite, in the following steps:
- Constructing a 3D device model of an SRAM cell from mask layout;
- Simulating the initial state of the SRAM cell before irradiation;
- Simulating the trajectories of incident energetic particles in the device in VisualParticle;
- Simulating the transient response of the SRAM cell when hit by an energetic particle;
- Plotting the voltage and current waveforms of the SRAM circuit nodes, to determine if a data upset has occurred to the cell.
- Visualization of the evolution of internal variables (potential and carrier concentration) in the SRAM cell that led to the upset.
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What's New
- VisualTCAD 2.0 First release of 2D process simulator Genes after years of development. [2021-10-17]
- VisualTCAD 1.9.2-3 Comes with revamped Total-Ionizing Dose effect simulation and supports SEE simulation in FDSOI circuits. [2017-10-15]
- Cogenda partners with POLYTEDA to distribute PowerDRC/LVS in Asia. [2017-9-15]
- CRad's FREE on-line version ForeCAST is open to you now! [2015-12-15]
- VisualTCAD 1.8.2-6 Comes with Total-Ionizing Dose effect simulation, among other improvements. [2015-7-10]
- Cogenda presented a quantitative analysis on the SEU rate of radiation-hardened SRAM cell due to elastic collisions at NSREC 2014. [2014-7-28]
- VisualTCAD 1.8.0-1 released with a new product for space radiation environment and effects analysis [2014-3-22]
- Cogenda presented a fully-physical simulation framework for single-event effects in semiconductor devices at RADECS 2012 [2012-9-28]
- Cogenda to present the super large TCAD device simulation at SISPAD 2012 [2012-6-18]
- Technical: Half-implicit solver for million-mesh-node TCAD device/circuit simulation [2012-6-18]
- VisualTCAD 1.7.4 released [2012-6-3]
- VisualTCAD 1.7.3 released [2012-1-1]
- VisualTCAD 1.7.2-5 released [2011-09-29]
- Cogenda to present MOSFET inverse-modeling technology at SISPAD 2011 and the companion workshop. [2011-07-17]
- Technical: Crossing the 10-transistor barrier of device simulation. [2011-07-12]
- New product: VisualParticle/GSeat for radiation effect analysis. [2011-07-01]
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FinFET Transistor
FinFET devices are used in the latest 22nm generation CMOS processes. Construct your FinFET model with Gds2Mesh and simulate it with Genius, today.
