Video Tutorial of VisualParticle
In this tutorial, you will learn how to build the structure of an SRAM, and simulate the interaction of an heavy ion with the device, in the following steps:
- Create the mesh of the SRAM with Gds2mesh
- Load the mesh in VisualParticle
- Setup the ion particle, and the particle simulation
- View the particle trajectories
- Export the particle trajectory for subsequent device simulation
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What's New
- VisualTCAD 1.9.2-3 Comes with revamped Total-Ionizing Dose effect simulation and supports SEE simulation in FDSOI circuits. [2017-10-15]
- Cogenda partners with POLYTEDA to distribute PowerDRC/LVS in Asia. [2017-9-15]
- CRad's FREE on-line version ForeCAST is open to you now! [2015-12-15]
- VisualTCAD 1.8.2-6 Comes with Total-Ionizing Dose effect simulation, among other improvements. [2015-7-10]
- Cogenda presented a quantitative analysis on the SEU rate of radiation-hardened SRAM cell due to elastic collisions at NSREC 2014. [2014-7-28]
- VisualTCAD 1.8.0-1 released with a new product for space radiation environment and effects analysis [2014-3-22]
- Cogenda presented a fully-physical simulation framework for single-event effects in semiconductor devices at RADECS 2012 [2012-9-28]
- Cogenda to present the super large TCAD device simulation at SISPAD 2012 [2012-6-18]
- Technical: Half-implicit solver for million-mesh-node TCAD device/circuit simulation [2012-6-18]
- VisualTCAD 1.7.4 released [2012-6-3]
- VisualTCAD 1.7.3 released [2012-1-1]
- VisualTCAD 1.7.2-5 released [2011-09-29]
- Cogenda to present MOSFET inverse-modeling technology at SISPAD 2011 and the companion workshop. [2011-07-17]
- Technical: Crossing the 10-transistor barrier of device simulation. [2011-07-12]
- New product: VisualParticle/GSeat for radiation effect analysis. [2011-07-01]
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3D SRAM Simulation
A 3D SRAM model with 96,000 nodes.
Create the model directly from mask layout and you can simulate circuit cells at stunning speed.