Video Tutorial on Simulation of Single-Event Upset in SRAM Cell
In the first tutorial, you will learn how to estimate the SEU rate
of a memory chip in a satellite, in the following steps:
Constructing a 3D device model of an SRAM cell from mask layout;
Simulating the initial state of the SRAM cell before irradiation;
Simulating the trajectories of incident energetic particles in the device in VisualParticle;
Simulating the transient response of the SRAM cell when hit by an energetic particle;
Plotting the voltage and current waveforms of the SRAM circuit nodes, to determine if a data upset has occurred to the cell.
Visualization of the evolution of internal variables (potential and carrier concentration) in the SRAM cell that led to the upset.
WebTCAD
WebTCAD is the web version of Cogenda's VisualTCAD, a powerful tool of TCAD process and device simulation. It's mainly designed for teaching purpose, aimed at demonstrating/simulating industry-standard semiconductor fabricating and working process. The intuitive graphic UI, step-by-step workflow, and fully featured post process ability make it much easier for university teachers and students to use.
What's New
VisualTCAD 2.2 3D device simulator Genius support stress induced multi-valley mobility model for Si and SiGe material. [2022-11-01]
VisualTCAD 2.1-p4 Simulation speed of 3D device simulator Genius increased by 10%~30%. [2022-08-24]
VisualTCAD 2.1 3D device simulator Genius support nanometer device such as FDSOI and FinFET. [2022-05-15]
VisualTCAD 2.0 First release of 2D process simulator Genes after years of development. [2021-10-17]
VisualTCAD 1.9.2-3 Comes with revamped Total-Ionizing Dose effect simulation and supports SEE simulation in FDSOI circuits. [2017-10-15]
Cogenda partners with POLYTEDA to distribute PowerDRC/LVS in Asia. [2017-9-15]
CRad's FREE on-line version ForeCAST is open to you now! [2015-12-15]
VisualTCAD 1.8.2-6 Comes with Total-Ionizing Dose effect simulation, among other improvements. [2015-7-10]
Cogenda presented a quantitative analysis on the SEU rate of radiation-hardened SRAM cell due to elastic collisions at NSREC 2014. [2014-7-28]