GSeat/VisualParticle: High-Energy Particles in Semiconductor Devices
Product Manual | Video Demo
GSeat is an Monte Carlo simulator for studying high-energy particles passing through semiconductor devices, and is part of the SEE solution of Cogenda.
GSeat is a specially-tailored application based on Geant4 code, a widely-used simulator in high-energy physics, space, radiation and medical applications. Physics models and databases relevant to single-event effects are packaged in GSeat.
GSeat is designed to interface with Cogenda's Genius semiconductor device simulator and Gds2Mesh 3D model builder. These three tools forms the foundation of the SEE analysis package of Cogenda. The outputs of GSeat are particle trajectories and energy deposit along the trajectories, which is the cause of carrier generation in following Genius TCAD simulation.
The geometry modeling of GSeat is in GDML format, which is defined by Geant4. GDML file can be generated from GDSII and process rules file, using Gds2Mesh.
VisualParticle
VisualParticle is the graphical user interface for GSeat. User can setup the incident particle and tune the simulation parameters in the GUI, and explore the simulated particle trajectory visually.
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WebTCAD
WebTCAD is the web version of Cogenda's VisualTCAD, a powerful tool of TCAD process and device simulation. It's mainly designed for teaching purpose, aimed at demonstrating/simulating industry-standard semiconductor fabricating and working process. The intuitive graphic UI, step-by-step workflow, and fully featured post process ability make it much easier for university teachers and students to use.
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What's New
- VisualTCAD 2024.10 released [2024-11-04]
- VisualTCAD 2024.06 released [2024-07-18]
- VisualTCAD 2024.03 released [2024-04-09]
- VisualTCAD 2024.02 released [2024-03-05]
- VisualTCAD 2023.12 released [2024-01-17]
- VisualTCAD 2023.11 released [2023-12-07]
- MozzTCAD 2023.10 released [2023-11-06]
- VisualTCAD 2.2 3D device simulator Genius support stress induced multi-valley mobility model for Si and SiGe material. [2022-11-01]
- VisualTCAD 2.1-p4 Simulation speed of 3D device simulator Genius increased by 10%~30%. [2022-08-24]
- VisualTCAD 2.1 3D device simulator Genius support nanometer device such as FDSOI and FinFET. [2022-05-15]
- VisualTCAD 2.0 First release of 2D process simulator Genes after years of development. [2021-10-17]
- Vspice 2.2 released [2019-4-15]
- Vspice 2.0 released [2018-10-20]
- VisualTCAD 1.9.2-3 Comes with revamped Total-Ionizing Dose effect simulation and supports SEE simulation in FDSOI circuits. [2017-10-15]
- Cogenda partners with POLYTEDA to distribute PowerDRC/LVS in Asia. [2017-9-15]
- Vspice 1.0 released [2017-4-15]
- CRad's FREE on-line version ForeCAST is open to you now! [2015-12-15]
- VisualTCAD 1.8.2-6 Comes with Total-Ionizing Dose effect simulation, among other improvements. [2015-7-10]
- Cogenda presented a quantitative analysis on the SEU rate of radiation-hardened SRAM cell due to elastic collisions at NSREC 2014. [2014-7-28]
- VisualTCAD 1.8.0-1 released with a new product for space radiation environment and effects analysis [2014-3-22]
- Cogenda presented a fully-physical simulation framework for single-event effects in semiconductor devices at RADECS 2012 [2012-9-28]
- Cogenda to present the super large TCAD device simulation at SISPAD 2012 [2012-6-18]
- Technical: Half-implicit solver for million-mesh-node TCAD device/circuit simulation [2012-6-18]
- VisualTCAD 1.7.4 released [2012-6-3]
- VisualTCAD 1.7.3 released [2012-1-1]
- VisualTCAD 1.7.2-5 released [2011-09-29]
- Cogenda to present MOSFET inverse-modeling technology at SISPAD 2011 and the companion workshop. [2011-07-17]
- Technical: Crossing the 10-transistor barrier of device simulation. [2011-07-12]
- New product: VisualParticle/GSeat for radiation effect analysis. [2011-07-01]
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Single Event Effects
Want to have a detailed understanding of Single Event Effets? Want to have a prediction of SEE rate on a certain space orbit? Want to design radiation-hardened IC?
