Video Tutorial of Visual TCAD
In this tutorial, you will learn
- to build the structure of a P-N junction diode in the following steps:
- Draw the outline of the device
- Define material regions
- Place doping profiles
- Generate the mesh grid
- to simulate the I-V curve of the diode, and analyze the result in the following steps:
- Load the device structure
- Setup the voltage sources attached to each electrode
- Submit the simulation job
- Plot the simulated I-V curve
- Visualize the electron concentration in the device
- Plot the electron concentration along a cut-line
- to do device-circuit mixed-mode simulation in the following steps:
- Assign a circuit symbol to the device
- Map the device electrodes to the circuit-level terminals
- Draw the circuit schematics, and place a device model in the circuit
- Submit the simulation job, and plot the simulated voltage waveform
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WebTCAD
WebTCAD is the web version of Cogenda's VisualTCAD, a powerful tool of TCAD process and device simulation. It's mainly designed for teaching purpose, aimed at demonstrating/simulating industry-standard semiconductor fabricating and working process. The intuitive graphic UI, step-by-step workflow, and fully featured post process ability make it much easier for university teachers and students to use.
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What's New
- VisualTCAD 2024.10 released [2024-11-04]
- VisualTCAD 2024.06 released [2024-07-18]
- VisualTCAD 2024.03 released [2024-04-09]
- VisualTCAD 2024.02 released [2024-03-05]
- VisualTCAD 2023.12 released [2024-01-17]
- VisualTCAD 2023.11 released [2023-12-07]
- MozzTCAD 2023.10 released [2023-11-06]
- VisualTCAD 2.2 3D device simulator Genius support stress induced multi-valley mobility model for Si and SiGe material. [2022-11-01]
- VisualTCAD 2.1-p4 Simulation speed of 3D device simulator Genius increased by 10%~30%. [2022-08-24]
- VisualTCAD 2.1 3D device simulator Genius support nanometer device such as FDSOI and FinFET. [2022-05-15]
- VisualTCAD 2.0 First release of 2D process simulator Genes after years of development. [2021-10-17]
- Vspice 2.2 released [2019-4-15]
- Vspice 2.0 released [2018-10-20]
- VisualTCAD 1.9.2-3 Comes with revamped Total-Ionizing Dose effect simulation and supports SEE simulation in FDSOI circuits. [2017-10-15]
- Cogenda partners with POLYTEDA to distribute PowerDRC/LVS in Asia. [2017-9-15]
- Vspice 1.0 released [2017-4-15]
- CRad's FREE on-line version ForeCAST is open to you now! [2015-12-15]
- VisualTCAD 1.8.2-6 Comes with Total-Ionizing Dose effect simulation, among other improvements. [2015-7-10]
- Cogenda presented a quantitative analysis on the SEU rate of radiation-hardened SRAM cell due to elastic collisions at NSREC 2014. [2014-7-28]
- VisualTCAD 1.8.0-1 released with a new product for space radiation environment and effects analysis [2014-3-22]
- Cogenda presented a fully-physical simulation framework for single-event effects in semiconductor devices at RADECS 2012 [2012-9-28]
- Cogenda to present the super large TCAD device simulation at SISPAD 2012 [2012-6-18]
- Technical: Half-implicit solver for million-mesh-node TCAD device/circuit simulation [2012-6-18]
- VisualTCAD 1.7.4 released [2012-6-3]
- VisualTCAD 1.7.3 released [2012-1-1]
- VisualTCAD 1.7.2-5 released [2011-09-29]
- Cogenda to present MOSFET inverse-modeling technology at SISPAD 2011 and the companion workshop. [2011-07-17]
- Technical: Crossing the 10-transistor barrier of device simulation. [2011-07-12]
- New product: VisualParticle/GSeat for radiation effect analysis. [2011-07-01]
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Single Event Effects
Want to have a detailed understanding of Single Event Effets? Want to have a prediction of SEE rate on a certain space orbit? Want to design radiation-hardened IC?
